MGF4921AM - SUPER LOW NOISE InGaAs HEMT

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Mitsubishi Electric Semiconductor

Part number	MGF4921AM
Manufacturer	Mitsubishi Electric Semiconductor
File Size	294.75 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4921AM Datasheet
Additional preview pages of the MGF4921AM datasheet.

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

Low noise figure NFmin. = 0.35dB (Typ. ) @ f=2.4GHz NFmin. = 0.35dB (Typ. ) @ f=4GHz High associated gain Gs = 18.0dB (Typ. ) @ f=2.4GHz Gs = 13.0dB (Typ. ) @ f=4GHz Fig.1.

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Published: Nov 1, 2012 |