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MGF4921AM - SUPER LOW NOISE InGaAs HEMT

Description

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

The 4pin flat lead package is small-thin size, and offers high cost performance.

Features

  • Low noise figure NFmin. = 0.35dB (Typ. ) @ f=2.4GHz NFmin. = 0.35dB (Typ. ) @ f=4GHz High associated gain Gs = 18.0dB (Typ. ) @ f=2.4GHz Gs = 13.0dB (Typ. ) @ f=4GHz Fig.1.

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< Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz Fig.1 APPLICATION L to C band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10~25mA ORDERING INFORMATION Tape & reel 15000pcs/reel www.DataSheet.
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