Datasheet4U Logo Datasheet4U.com

MGF4921AM - SUPER LOW NOISE InGaAs HEMT

General Description

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • Low noise figure NFmin. = 0.35dB (Typ. ) @ f=2.4GHz NFmin. = 0.35dB (Typ. ) @ f=4GHz High associated gain Gs = 18.0dB (Typ. ) @ f=2.4GHz Gs = 13.0dB (Typ. ) @ f=4GHz Fig.1.

📥 Download Datasheet

Full PDF Text Transcription for MGF4921AM (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MGF4921AM. For precise diagrams, and layout, please refer to the original PDF.

< Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in ...

View more extracted text
nGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz Fig.1 APPLICATION L to C band low noise amplifiers MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10~25mA ORDERING INFORMATION Tape & reel 15000pcs/reel www.Da

More Datasheets from Mitsubishi Electric

Part Number Description
MGF4931AM SUPER LOW NOISE InGaAs HEMT
MGF4934AM SUPER LOW NOISE InGaAs HEMT
MGF4934BM SUPER LOW NOISE InGaAs HEMT
MGF4934CM SUPER LOW NOISE InGaAs HEMT
MGF4935AM SUPER LOW NOISE InGaAs HEMT
MGF4936AM SUPER LOW NOISE InGaAs HEMT
MGF4941AL SUPER LOW NOISE InGaAs HEMT
MGF4941CL Micro-X type plastic package
MGF4963BL Low Noise GaAs HEMT
MGF4964BL Low Noise GaAs HEMT