Datasheet Summary
< Low Noise GaAs HEMT >
4pin flat lead package
DESCRIPTION
The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
Features
- Low noise figure NFmin. = 0.35dB (Typ.) @ f=2.4GHz NFmin. = 0.35dB (Typ.) @ f=4GHz
- High associated gain Gs = 18.0dB (Typ.) @ f=2.4GHz Gs = 13.0dB (Typ.) @ f=4GHz
Fig.1
APPLICATION
L to C band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
REMENDED BIAS CONDITIONS
VDS=2V , ID=10~25mA
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